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IRF640 Datasheet(PDF) 2 Page - Weitron Technology

Part # IRF640
Description  N-Channel Enhancement Mode POWER MOSFET
PDF  6 Pages
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Manufacturer  WEITRON [Weitron Technology]
Direct Link  http://www.weitron.com.tw
Logo WEITRON - Weitron Technology

IRF640 Datasheet(HTML) 2 Page - Weitron Technology

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Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
ID=250µA,VGS=0
BVDSS
200
-
-
Gate-Source Threshold Voltage
ID=250µA,VDS=VGS
VGS(Th)
2.0
-
4.0
V
Gate-Source Leakage current
VGS=±20V
IGSS
-
-
±100
nA
IDSS
-
-
25
Drain-SourceLeakage Current(Tj=25˚C)
VDS=200V,VGS=0
VDS=160V,VGS=0
Drain-SourceLeakage Current(Tj=125˚C)
-
-
250
μA
Static Drain-Source On-Resistance
ID=11A,VGS=10V
RDS(on)
-
-
0.18
Ω
Forward Transconductance
ID=11A,VDS=50V
gfs
6.7
-
-
S
Input Capacitance
VGS=0V,VDS=25V,f=1.0MHz
VGS=0V,VDS=25V,f=1.0MHz
VGS=0V,VDS=25V,f=1.0MHz
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
1300
430
-
-
pF
2/6
04-Nov-08
IRF640
-
130
-
Switching
Forward On Voltage
IS=18A, VGS=0V,Tj=25˚C
VSD
-
-
2.0
V
ID=18A, VDD=100V,RGS=9.1 ,RL=5.4
Turn-on Delay Time
Td(on)
-
21
-
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
Rise Time
Tr
-
77
-
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
Turn-off Delay Time
Td(off)
-
68
-
ns



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