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SSF6808 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF6808 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  SSF6808 ©Silikron Semiconductor CO.,LTD. 2008.8.1 Version : 1.0 page 1of5 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْC Continuous drain current,VGS@10V 110 ID@Tc=100ْC Continuous drain current,VGS@10V 80 IDM Pulsed drain current ① 400 A PD@TC=25ْC Power dissipation 150 W Linear derating factor 2.0 W/ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 480 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 55 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 6 8 mΩ VGS=10V,ID=68A VGS(th) Gate threshold voltage 2.0 3 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A — — 1 VDS=55V,VGS=0V IDSS Drain-to-Source leakage current — — 10 μA VDS=55V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF6808 TOP View (TO220) ID =110A BV=55V Rdson=8mohm Feathers: Advanced trench process technology Ultra low Rdson, typical 6mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house. Application: Power switching application |
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