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HAT2202C Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT2202C Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() HAT2202C REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Page 3 of 6 Main Characteristics Ambient Temperature Ta (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 1.6 1.2 0.8 0.4 0 50 100 150 200 30 10 3 1 0.3 0.1 0.1 0.3 0.03 1 3 10 30 100 20 16 12 8 4 0 24 6 8 10 20 16 12 8 4 0 12 34 5 0.03 0.01 100 1.4 V 1.6 V Pulse Test 2.0 V 120 80 40 0 24 6 8 10 0.1 10 1 100 100 1000 10 160 3 A 1.5 A 1.8 V 2.5 V 4.5 V VGS = 1.2 V 2.5 V PW = 100 μs 25°C 75°C ID = 1 A VGS = 4.5 V Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Tc = –25°C VDS = 10 V Pulse Test Pulse Test Pulse Test Ta = 25°C,1shot pulse When using the FR4 board. Operation in this area is limited by R DS(on) PW =10 μs |
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