2N3019 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N3019 – 2N3020

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

2N3019

VCB =950 V, IE =0

2N3020

2N3019

ICBO

Collector Cutoff Current

VCB =90 V, IE =0, Tj =150°C

2N3020

µA

2N3019

IEBO

Emitter Cutoff Current

VEB =5 V, IC =0

2N3020

2N3019

VCEO

Collector Emitter Breakdown

Voltage

IC =10 mA, IB =0

2N3020

2N3019

VCBO

Collector Base Breakdown

Voltage

IC =100 µA, IE =0

2N3020

140

2N3019

VEBO

Emitter Base Breakdown

Voltage

IE =100 µA, IC =0

2N3020

2N3019

IC =0.1 mA, VCE =10 V

2N3020

100

2N3019

IC =10 mA, VCE =10 V

2N3020

120

2N3019

100

300

IC =150 mA, VCE =10 V

2N3020

120

2N3019

IC =500 mA, VCE =10 V

2N3020

100

2N3019

IC =1 A, VCE =10 V

2N3020

hFE (1)

DC Current Gain

IC =150 mA, VCE =10 V

Tamb = -55°C

2N3019

IC =150 mA, IB =15 mA

2N3020

0.2

2N3019

VCE(SAT) (1)

Collector-Emitter saturation

Voltage

IC =500 mA, IB =50 mA

2N3020

0.5

VBE(SAT) (1)

Base-Emitter saturation

Voltage

IC =150 mA, IB =15 mA

2N3019

1.1

2N3019

100

Transition frequency

IC =50 mA, VCE =10 V

f = 20 MHz

2N3020

MHz

2N3019

400

hfe

Small Signal Current Gain

IC =1 mA, VCE =5 V

f = 1 kHz

2N3020

200

Noise Figure

IC=-100 µA, VCE =10 V

f = 1 kHz, Rg = 1kΩ

2N3019

CCBO

Collector-Base capacitance

IE = 0 ,VCB=10 V

f = 1 MHz

2N3020

2N3019

CEBO

Emitter-Base capacitance

IC = 0 ,VEB=0.5 V

f = 1 MHz

2N3020

2N3019

rbb’Cb’c

Feedback Time Constant

IC =10 mA, VCE =10 V

f = 4 MHz

2N3020

400

(1) Pulse conditions : tp < 300

µs, δ =2%

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