2N5322 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP 2N5322 – 2N5323

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ

Unit

VCB = -80 V, IE =0

2N5322

-0.5

ICBO

Collector Cutoff Current

VCB = -60 V, IE =0

2N5323

-5

µA

VEB = -5 V, IC =0

2N5322

-0.1

IEBO

Emitter Cutoff Current

VEB = -4 V, IC =0

2N5323

-0.5

µA

2N5322

-75

VCEO

Collector Emitter Breakdown

Voltage

IC = -10 mA, IB =0

2N5323

-50

2N5322

-100

VCEV

Collector Emitter Breakdown

Voltage

IC = -100 µA

VBE = 1.5V

2N5323

-75

2N5322

-6

VEBO

Emitter Base Breakdown

Voltage

IE = -100 µA, IC =0

2N5323

-5

2N5322

130

IC = -500 mA

VCE = -4 V

2N5323

250

hFE (1)

DC Current Gain

IC = -1 A

VCE = -2 V

2N5322

-0.7

VCE(SAT) (1)

Collector-Emitter saturation

Voltage

IC = -500 mA, IB = -50 mA

2N5323

-1.2

2N5322

-1.1

VBE (1)

Base-Emitter Voltage

IC = -500 mA, VCE = -4 V

2N5323

-1.4

2N5322

Transition frequency

IC = -50 mA, VCE = -4 V

f = 10 MHz

2N5323

MHz

2N5322

ton

Turn-on Time

IC = -500 mA, VCC = -30 V

IB1 = -50 mA

2N5323

100

2N5322

toff

Turn-off Time

IC = 500 mA, VCC = 30 V

IB1 = -IB2 = -50 mA

2N5323

1000

(1) Pulse conditions : tp < 300

µs, δ =1%

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