BC160SLASH10 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP BC160/10 – BC160/16

PNP BC161/10 – BC161/16

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Mx

Unit

IE= 0 ;VCES= 40 V

BC160

IE= 0 ;VCES= 60 V

BC161

100

VCES=40 V

BC160

-ICES

Collector – Cutoff Current

IE= 0 ; V

Tamb = 150°c

VCES=60 V

BC161

100

µA

BC160

-VCB0

Collector – Base Breakdown

Voltage

-IC = 100 µA

IE= 0

BC161

BC160

-VCE0 (*)

Collector – Emitter

Breakdown Voltage

-IC = 10 mA

IB= 0

BC161

BC160

-VEB0

Emitter – Base Breakdown

Voltage

-IE= 100 µA

IC= 0

BC161

-IC= 100 mA , -IB= 10 mA

0.1

-IC= 500 mA , -IB= 50 mA

0.35

-VCE(SAT)

(*)

Collector-Emitter saturation

Voltage

-IC= 1 A, -IB= 100 mA

0.6

-VBE (*)

Base-Emitter Voltage

-IC= 1 A , -VCE= 1V

1.7

110

Gr 10

-IC= 100 µA , -VCE= 1 V

Gr 16

120

140

250

Gr 10

100

160

-IC= 100 mA , -VCE= 1 V

Gr 16

100

160

250

Gr 10

hFE (*)

DC Current Gain

-IC= 1 A , -VCE= 1 V

Gr 16

Transition Frequency

-IC= 50 mA , -VCE= 10 V

MHZ

CCBO

Collector – base

Capacitance

IE= 0 ; -VCB= 20V

f = 1 MHZ

toff

Turn-off times

-IC=100 mA

-IB1=-IB2=5 mA

650

ton

Turn-on times

-IC=100 Ma

-IB1=1 mA

500

(*) Pulsed : pulse duration = 300µs, duty cycle = 1%

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