CS684TO3 datasheet(2/2 Pages) COMSET

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CS684 TO3

COMSET SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

IE=0 , -VCB= -VCEOMAX=140 V

0,2

-ICBO

Collector cut-off current

IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150°C

-ICEO

Collector cut-off current

IB=0 , -VCE= -1/2VCEOMAX=70 V

0,2

-IEBO

Emitter cut-offcurrent

IC=0, -VEB=5 V

-VCE(SAT)

Collector-Emitter saturation

Voltage

-IC=1.5 A, -IB=6 mA

-VCE=3 V, -IC=500 mA

2000

-VCE=3 V, -IC=1,5 A

750

hFE

DC Current Gain

-VCE=3 V, -IC=4 A

750

-VBE

Base-Emitter Voltage(1&2)

-VCE=3 V, -IC=1,5 A

2,5

hfe

Small signal current gain

-VCE=3 V, -IC=1,5 A, f= 1 MHz

fhfe

Ut-off frequency

-VCE=3 V, -IC=1,5 A

kHz

Diode forward voltage

IF=1,5 A

1,5

-I(SB)

Second-breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink

0,8

ton

Turn-on time

0,8

toff

Turn-off time

-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V

4,5

µs

Measured under pulse conditions :tP <300µs, δ <2%.

VBE decreases by about 3,6 mV/K with increasing temperature.

MECHANICAL DATA CASE TO-3

DIMENSIONS

inches

25,51

1,004

38,93

1,53

30,12

1,18

17,25

0,68

10,89

0,43

11,62

0,46

8,54

0,34

1,55

0,6

19,47

0,77

0,04

4,06

0,16

Pin 1 :

Base

Pin 2 :

Emitter

Case :

Collector

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