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SSF6014 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF6014 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 1of5 SSF6014 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=100ْC Continuous drain current,VGS@10V 42 IDM Pulsed drain current ① 240 PD@TC=25ْC Power dissipation 120 W Linear derating factor 0.74 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 235 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.03 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 60 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 12 14 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 60 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current — — 2 μA VDS=60V,VGS=0V — — 10 VDS=60V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF6014 TOP View (TO220) ID =60A BV=60V Rdson=14mΩ（max.） Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6014 is assembled in high reliability and qualified assembly house. Application: Power switching application |
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