 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
PSII6/12 Datasheet(PDF) 1 Page - Powersem GmbH |
|
|
|||||||||||||||||||||||||||||
PSII6/12 Datasheet(HTML) 1 Page - Powersem GmbH |
|
|
1 / 2 page  IGBT Module I C25 = 6 A V CES = 1200 V V CE(sat)typ. = 3.9 V Features • NPT IGBT’s - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plat e • UL registered, E 148688 Applications • AC drives • power supplies with power factor correction Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PAC TM 2 2002 POWERSEM reserves the right to change limits, test conditions and dimensions Preliminary Data Sheet *NTC optional Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. PSII 6/12* S9 X18 N9 L9 W14 R5 N5 H5 D5 A5 K12 K13 G1 F3 K10 A1 C1 PSII 6/12* IGBT Symbol Conditions Maximum Ratings V CES T VJ = 25°C to 150°C 1200 V V GES ± 20 V I C25 T C = 25°C 6 A I C80 T C = 80°C 4.1 A I CM V GE = 15/0 V; RG = 89 Ω; TVJ = 125°C 9.6 A V CEK RBSOA, Clamped inductive load; L = 100 µH V CES t SC V CE = VCES; VGE = 15/0 V; RG = 89 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive P tot T C = 25°C 40 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. V CE(sat) I C = 4 A; VGE = 15 V; TVJ = 25°C 3.9 4.6 V T VJ = 125°C 4.6 V V GE(th) I C = 0.1 mA; VGE = VCE 35 V I CES V CE = VCES;VGE = 0 V; TVJ = 25°C 0.1 mA V CE = 960 V; V GE = 0 V; TVJ = 125°C 0.5 mA I GES V CE = 0 V; VGE = ± 20 V 100 nA t d(on) 30 ns t r 20 ns t d(off) 290 ns t f 90 ns E on 0.4 mJ E off 0.2 mJ C ies V CE = 25 V; VGE = 0 V; f = 1 MHz 205 pF Q Gon V CE = 960 V; VGE = 15 V; IC = 2 A 11 nC R thJC (per IGBT) 3.1 K/W R thJH (per IGBT) with heatsink compound 6.2 K/W Inductive load, T VJ = 125°C V CE = 600 V; IC = 4 A V GE = 15/0 V; RG = 89 Ω |
Similar Part No. - PSII6/12 |
|
Similar Description - PSII6/12 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
British ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
