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PSII100/12 Datasheet(PDF) 1 Page - Powersem GmbH

Part # PSII100/12
Description  IGBT Module
PDF  4 Pages
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Manufacturer  POWERSEM [Powersem GmbH]
Direct Link  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSII100/12 Datasheet(HTML) 1 Page - Powersem GmbH

  PSII100/12 Datasheet HTML 1Page - Powersem GmbH PSII100/12 Datasheet HTML 2Page - Powersem GmbH PSII100/12 Datasheet HTML 3Page - Powersem GmbH PSII100/12 Datasheet HTML 4Page - Powersem GmbH  
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 1 / 4 page
background image
tentative
data
sheet
product
still
under
development
IGBT Module
I
C80
=
90 A
V
CES
=
1200 V
V
CE(sat)typ. =
2.8 V
Features
Package with DCB ceramic
base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
Applications
AC and DC motor control
AC servo and robot drives
Power supplies
Welding inverters
Advantages
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSII 100/12*
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
1200
V
V
GES
± 20
V
I
C25
T
C = 25°C
130
A
I
C80
T
C = 80°C
90
A
I
CM
V
GE = ±15 V; RG = 15 Ω; TVJ = 125°C
150
A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH
V
CES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
10
µs
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
568
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 125 A; VGE = 15 V; TVJ =
25°C
2.8
3.4
V
T
VJ = 125°C
3.2
V
V
GE(th)
I
C = 3 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES;VGE = 0 V;
T
VJ =
25°C
5 mA
T
VJ = 125°C
16 mA
I
GES
V
CE = 0 V; VGE =
± 20 V
320
nA
t
d(on)
100
ns
t
r
50
ns
t
d(off)
650
ns
t
f
50
ns
E
on
12.1
mJ
E
off
10.5
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
5.5
nF
R
thJC
(per IGBT)
0.22 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 µm)
0.44
K/W
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 75 A
V
GE = 15/0 V; RG = 15 Ω
Short Circuit SOA Capability
Square RBSOA
ECO-TOPTM 1
*NTC optional
V3
V6
N1
G1
Q1
V10
V9
N15
K1
V13
V12
G15
V1
U1
A1
S15
D1
A9
A7
A15
R15
typical picture, for pin
configuration see outline
drawing


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