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HTP4A60 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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HTP4A60 Datasheet(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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1 / 3 page ![]() Shantou Huashan Electronic Devices Co.,Ltd. HTP4A60 NON INSULATED TYPE TRIAC (TO-220 PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=4A) * High Commutation dv/dt █ General Description The Triac HTP4A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings(T a=25℃) Tstg——Storage Temperature………………………………………………………………… -40~125℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation……………………………………………………………… 3W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT(RMS)——R.M.S On-state Current(Ta=66℃)……………………………………………… 4.0A VGM——Peak Gate Voltage……………………………………………………………… 7.0V I GM —— Peak Ga te C u rrent …… …………………………………………………… 0. 5A ITSM——Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)……… 30/33A █ Electrical Characteristics(T a=25℃) Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-state Current 1.0 mA VD=VDRM,Single Phase, Half Wave, TJ=125℃ VTM Peak On-state Voltage 1.6 V IT=6A, Inst. Measurement I+GT1 Gate Trigger Current(Ⅰ) 20 mA VD=6V, RL=10 ohm I- GT1 Gate Trigger Current(Ⅱ) 20 mA VD=6V, RL=10 ohm I- GT3 Gate Trigger Current(Ⅲ) 20 mA VD=6V, RL=10 ohm V+ GT1 Gate Trigger Voltage(Ⅰ) 1.5 V VD=6V, RL=10 ohm V- GT1 Gate Trigger Voltage(Ⅱ) 1.5 V VD=6V, RL=10 ohm V- GT3 Gate Trigger Voltage(Ⅲ) 1.5 V VD=6V, RL=10 ohm VGD Non-trigger Gate Voltage 0.2 V TJ=125℃,VD=1/2VDRM (dv/dt)c Critical Rate of Rise of Off-State Voltage at Commutation 5.0 V/µS TJ=125℃,VD=2/3VDRM (di/dt)c= -3A/ms IH Holding Current 5.0 mA Rth(j-c) Thermal Resistance 2.8 ℃/W Junction to case |
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