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APTM50DHM65T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTM50DHM65T3G
Description  Asymmetrical - Bridge MOSFET Power Module
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DHM65T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTM50DHM65T3G
www.microsemi.com
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 42A
65
78
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10800
Coss
Output Capacitance
1164
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
148
pF
Qg
Total gate Charge
340
Qgs
Gate – Source Charge
75
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A
155
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2Ω
50
ns
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
1.7
2.3
IF = 120A
2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
70
trr
Reverse Recovery Time
Tj = 125°C
140
ns
Tj = 25°C
100
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt = 200A/µs
Tj = 125°C
690
nC



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