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MMBT3906 Datasheet(PDF) 2 Page - Rectron Semiconductor |
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MMBT3906 Datasheet(HTML) 2 Page - Rectron Semiconductor |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS(1) SMALL-SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Chatacteristic Collector-Emitter Breakdown Voltage (2) (IC= -1.0 mAdc, IB= 0) Collector-Base Breakdown Voltage (IC= -100uAdc, IE= 0) Emitter-Base Breakdown Voltage (IE= -100uAdc, IC= 0) Base Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc) Collector Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc) DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc) (IC= -1.0mAdc, VCE= -1.0Vdc) (IC= -10mAdc, VCE= -1.0Vdc) (IC= -50mAdc, VCE= -1.0Vdc) (IC= -100mAdc, VCE= -1.0Vdc) V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL ICEX - -50 - -50 nAdc nAdc Vdc fT 250 - MHz hFE 60 300 - 30 80 100 60 - - - - VCE(sat) - -0.25 - -0.4 Symbol Min Max Unit (IC= -50mAdc, IB= -5.0mAdc) Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc) Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 100MHz) Cobo Cibo - 4.5 pF pF td tr ts tf NF - - - - ns dB ns hie - 10 2.0 12 kW hre 0.1 10 100 400 X 10-4 hfe 3.0 60 - 4.0 - hoe 225 75 35 35 umhos Output Capacitance (VCB= -5.0Vdc, IE= 0, f= 1.0MHz) Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz) Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) (VCC= -3.0Vdc, VBE= 0.5Vdc, IC= -10mAdc, IB1= -1.0mAdc) (VCC= -3.0Vdc, IC= -10mAdc, IB1= IB2= -1.0mAdc) Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (VCE= -10Vdc, IC= -10mAdc, f= 1.0kHz) Noise Figure (VCE= -5.0Vdc, IC= -100uAdc, RS= 1.0kW, f= 1.0kHz) Vdc VBE(sat) -0.65 -0.85 - -0.95 (IC= -50mAdc, IB= -5.0mAdc) Delay Time Rise Time Storage Time Fall Time Note : Pulse Test: Pulse Width<300ms,Duty Cycle<2.0% - - |
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