Switch Mode series NPN silicon Power Transistor

KSH13009AF

Switch Mode series NPN silicon Power Transistor

- High voltage, high speed power switching

- Suitable for switching regulator, inverters motor controls

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector Emitter Voltage

V

700

400

V

V

TO-220F

1. Base

2. Collector

3. Emitter

12 Amperes

NPN Silicon Power Transistor

100 Watts

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

400

9

12

24

6

50

150

-65~150

V

V

A

A

A

W

℃

℃

1 2

3

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Emitter Sustaining Voltage

400

V

Emitter Cut-off Current

1

㎃

*DC Current Gain

8

6

40

30

FE2

CE

*Collector-Emitter Saturation Voltage

1

1.5

3

V

V

V

*Base-Emitter Saturation Voltage

1.2

1.6

V

V

Output Capacitance

180

㎊

Current Gain Bandwidth Product

4

㎒

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Turn on Time

Vcc=125V, Ic=8A

1.1

㎲

Storage Time

3

㎲

Fall Time

0.7

㎲

Note.

Package Mark information.

S

S

SemiHow Symbol

R8 ~ 17

◎ SEMIHOW REV.A0,Oct 2007

YWW

Z

KSH13009AF

YWW

Y; year code, WW; week code

Z

hFE1 Classification

hFE1

Classification

O

15 ~ 28

Y

26 ~ 39

Y1(26~33), Y2(31~39)