SSM2303N datasheet(2/6 Pages) SSC

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SSM2303N

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆T

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.1

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-1.7A

240

Ω

VGS=-4.5V, ID=-1.3A

460

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

gfs

Forward Transconductance

VDS=-10V, ID=-1.7A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=55

oC)

VDS=-30V, VGS=0V

-10

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-1.7A

6.2

Qgs

Gate-Source Charge

VDS=-15V

1.4

Qgd

Gate-Drain ("Miller") Charge

VGS=-10V

0.3

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω ,VGS=-10V

Fall Time

RD=6Ω

-20

Ciss

Input Capacitance

VGS=0V

230

Coss

Output Capacitance

VDS=-15V

130.4

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-1.25

ISM

Pulsed Source Current ( Body Diode )

-10

VSD

Forward On Voltage

IS=-1.25A, VGS=0V

-1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t < 5 sec.

± 20V

±100

Rev.2.02 3/16/2004

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