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SSM9410M

Rev.2.02 4/06/2004

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

30V

Low on-resistance

6m

Ω

Fast switching

18A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

W/°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

°C/W

Thermal Data

Parameter

Total Power Dissipation

2.5

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.02

Storage Temperature Range

Continuous Drain Current

3

15

A

Pulsed Drain Current

1

80

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Rating

30

18

A

± 12

Advanced power MOSFETs from Silicon Standard provide

the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and industrial

surface-mount applications and is well suited for low voltage applications

such as DC/DC converters.

S

S

S

G

D

D

D

D

SO-8

G

D

S