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SSM9962M Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM9962M
Description  DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  5 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9962M Datasheet(HTML) 2 Page - Silicon Standard Corp.

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SSM9962M/GM
8/21/2004 Rev.2.01
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.1
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
-
25
m
Ω
VGS=4.5V, ID=5A
-
-
40
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
11
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=7A
-
25.8
-
nC
Qgs
Gate-Source Charge
VDS=32V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.1
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
10.6
-
ns
tr
Rise Time
ID=1A
-
6.8
-
ns
td(off)
Turn-off Delay Time
RG=5.7Ω ,VGS=10V
-
26.3
-
ns
tf
Fall Time
RD=20Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1165
-
pF
Coss
Output Capacitance
VDS=25V
-
205
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
142
-
pF
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
Is=1.7A,
VGS=0V,
-
21.2
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC



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