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SSM9972GS Datasheet(PDF) 2 Page - Silicon Standard Corp.

Part # SSM9972GS
Description  N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
PDF  5 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9972GS Datasheet(HTML) 2 Page - Silicon Standard Corp.

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SSM9972GP,S
2/16/2005 Rev.1.1
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.06
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=35A
-
-
18
m
Ω
VGS=4.5V, ID=25A
-
-
22
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=35A
-
55
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=48V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=35A
-
32
51
nC
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
11
-
ns
tr
Rise Time
ID=35A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
45
-
ns
tf
Fall Time
RD=0.86Ω
-80
-
ns
Ciss
Input Capacitance
VGS=0V
-
3170
5070
pF
Coss
Output Capacitance
VDS=25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=35A, VGS=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
IS=35A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.



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