PRODUCT INFORMATION

HAL 1821/1822/1823

July/2009

All information and data contained in this product information are without any commitment, are not to be consid-

ered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Product or

development sample availability and delivery are exclusively subject to our respective order confirmation form. By

this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third

parties which may result from its use.

Micronas GmbH

⋅ Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg (Germany) ⋅ P.O. Box 840 ⋅ D-79008 Freiburg (Germany)

Tel. +49-761-517-0

⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ www.micronas.com

No part of this publication may be reproduced, photo-

copied, stored on a retrieval system, or transmitted

without the express written consent of Micronas GmbH.

Edition July, 14, 2009; Order No. PI000135_001EN

System Architecture

The HAL 1821/1822/1823 sensors are pro-

duced in a proven submicron CMOS tech-

nology.

The HAL 1821/1822/1823 feature a temper-

ature-compensated Hall plate with chop-

pered offset compensation, an A/D con-

verter, digital signal processing, an analog

output and protection devices on all pins.

The internal digital signal processing is a

great benefit because analog offsets, tem-

perature shifts, and mechanical stress do

not degrade the sensor accuracy.

Internally

Temperature

Oscillator

Switched

Digital

D/A

Analog

Calibration Control

stabilized

Supply and

Protection

Devices

Dependent

Bias

Protection

Devices

Hall Plate

Signal

Processing

Converter

Output

A/D

Converter

Overvoltage,

Undervoltage

Detection

GND

OUT

50

Fig. 1: Block diagram of the HAL 1821/1822/1823