1996 Mar 13

2

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS45A

FEATURES

• Continuous reverse voltage:

max. 125 V

• Repetitive peak forward current:

max. 625 mA

• Low reverse current: max. 1 nA

• Switching time: typ. 1.5 μs.

APPLICATION

• Low leakage current applications.

DESCRIPTION

Epitaxial medium-speed switching diode with a low leakage current in a

hermetically-sealed glass SOD68 (DO-34) package.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

handbook, halfpage

MAM156

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1.

Device mounted on a printed-circuit board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

125

V

continuous reverse voltage

−

125

V

continuous forward current

see Fig.2; note 1

−

250

mA

repetitive peak forward current

−

625

mA

surge; see Fig.4

−

4

A

−

1

A

−

0.5

A

total power dissipation

−

300

mW

storage temperature

−65

+175

°C

junction temperature

−

175

°C