2002 Oct 28

2

NXP Semiconductors

Product data sheet

PNP transistor/Schottky diode module

PMEM4010PD

FEATURES

• 600 mW total power dissipation

• High current capability

• Reduces required PCB area

• Reduced pick and place costs

• Small plastic SMD package.

Transistor:

• Low collector-emitter saturation voltage.

Diode:

• Ultra high-speed switching

• Very low forward voltage

• Guard ring protected.

APPLICATIONS

• DC/DC convertors

• Inductive load drivers

• General purpose load drivers

• Reverse polarity protection circuits.

DESCRIPTION

current capability and a planar Schottky barrier diode with

an integrated guard ring for stress protection in a SOT457

(SC-74) small plastic package.

NPN complement: PMEM4010ND.

PINNING

PIN

DESCRIPTION

1

emitter

2

not connected

3

cathode

4

anode

5

base

6

collector

handbook, halfpage

MGU868

13

2

4

5

6

1

3

4

6

5

Fig.1 Simplified outline (SOT457) and symbol.

Marking code: B2.