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PRTR5V0U6AS Datasheet(PDF) 3 Page - NXP Semiconductors |
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PRTR5V0U6AS Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() PRTR5V0U6AS_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 18 February 2008 3 of 7 NXP Semiconductors PRTR5V0U6AS High speed interface ESD protection to IEC 61000-4-2 level 4 6. Characteristics [1] Measured from pin 1, 2, 4, 5, 6 and 8 to ground. [2] Measured from pin 7 to ground. Table 5. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit C(I/O-GND) input/output to ground capacitance VI = 0 V; f = 1 MHz; VCC = 3 V [1] - 1.0 - pF ILR reverse leakage current VI = 3 V [1] - - 100 nA VBR breakdown voltage Zener diode; II = 1 mA [2] 6- 9V Csup supply pin to ground capacitance VI = 0 V; f = 1 MHz; VCC = 3 V [2] -30 - pF VF forward voltage - 0.7 - V |
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