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VND670SP Datasheet(PDF) 1 Page - STMicroelectronics

Part # VND670SP
Description  Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND670SP Datasheet(HTML) 1 Page - STMicroelectronics

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December 2008
Rev 2
1/20
20
VND670SP
Dual high-side switch with dual Power MOSFET
gate driver (bridge configuration)
Features
■ 5V logic level compatible inputs
■ Gate drive for two external power MOSFET
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Cross-conduction protection
■ Current limitation
■ Very low standby power consumption
■ PWM operation up to 10 KHz
■ Protection against loss of ground and loss of
VCC
■ Reverse battery protection
Description
The VND670SP is a monolithic device made
using STMicroelectronics VIPower technology
M0-3, intended for driving motors in full bridge
configuration. The device integrates two 30 mW
Power MOSFET in high-side configuration, and
provides gate drive for two external Power
MOSFET used as low side switches. INA and INB
allow to select clockwise or counter clockwise
drive or brake; DIAGA/ENA, DIAGB/ENB allow to
disable one half bridge and feedback diagnostic.
Built-in thermal shutdown, combined with a
current limiter, protects the chip in
overtemperature and short circuit conditions.
Short to battery protects the external connected
low-side Power MOSFET.
Type
RDS(on)
IOUT
VCC
VND670SP
30m
Ω(1)
1.
Per each channel.
15A(1)
40V
PowerSO-10
1
10
Table 1.
Device summary
Package
Order codes
Tube
Tape and reel
PowerSO-10
VND670SP
VND670SP13TR
www.st.com


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