13

9146D–AUTO–09/10

Atmel ATA6663/ATA6664

7.12

Leakage current at loss of

battery; node has to substain the

current that can flow under this

condition; bus must remain

operational under this condition

V

6I

BUS_NO_Bat

0.1

2

µA

A

7.13

Capacitance on pin LIN to GND

6

C

LIN

20

pF

D

8

LIN Bus Receiver

8.1

Center of receiver threshold

V

(V

0.475

×

V

S

0.5

×

V

S

0.525

× V

S

VA

8.2

Receiver dominant state

V

6

V

BUSdom

–27

0.4

×

VA

8.3

Receiver recessive state

V

6

V

BUSrec

0.6

×

V

S

40

V

A

8.4

Receiver input hysteresis

0.028

×

V

S

0.1

×

V

S

0.175

× V

S

VA

8.5

Pre-wake detection LIN

High-level input voltage

6V

LINH

V

2V

V

0.3V

VA

8.6

Pre-wake detection LIN

Low-level input voltage

Switches the LIN receiver on

6

V

LINL

–27V

3.3V

VA

8.7

LIN Pre-wake pull-up current

V

V

–30

–10

µA

A

9

Internal Timers

9.1

Dominant time for wake-up via

LIN bus

V

6

t

BUS

30

90

150

µs

A

9.2

Time of low pulse for wake-up

via pin WAKE

3

735

50

µs

A

9.3

Time delay for mode change

from fail-safe mode to normal

mode via pin EN

2

2

7

15

µs

A

9.4

Time delay for mode change

from normal mode into sleep

mode via pin EN

V

2

t

sleep

715

24

µs

A

9.5

Atmel ATA6663:

TXD dominant time out time

V

4

t

dom

40

60

85

ms

A

9.6

until INH switches to high

7, 8

200

µs

A

9.7

Monitoring time for wake-up via

LIN bus

610

15

ms

A

6.

Electrical Characteristics (Continued)

No.

Parameters

Test Conditions

Pin

Symbol

Min.

Typ.

Max.

Unit

Type*

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter