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2SJ596 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SJ596
Description  DC / DC Converter Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ596 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SJ596
No.6979-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--8
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
--32
A
Allowable Power Dissipation
PD
1W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0
--10
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--4A
5
7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--4A, VGS=--10V
110
145
m
Ω
RDS(on)2
ID=--2A, VGS=--4V
155
220
m
Ω
Input Capacitance
Ciss
VDS=--20V, f=1MHz
680
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
50
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
10
ns
Rise Time
tr
See specified Test Circuit
30
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
75
ns
Fall Time
tf
See specified Test Circuit
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--8A
22
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--8A
4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--8A
5
nC
Diode Forward Voltage
VSD
IS=--8A, VGS=0
--0.9
--1.2
V
Marking : J596
Switching Time Test Circuit
PW=10
µs
D.C.
≤1%
0V
--10V
VIN
P.G
50
Ω
G
S
ID= --4A
RL=7.5Ω
VDD= --30V
VOUT
VIN
D
2SJ596



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