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STD7NK30Z Datasheet(PDF) 2 Page - STMicroelectronics

Part # STD7NK30Z
Description  N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™Power MOSFET
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD7NK30Z Datasheet(HTML) 2 Page - STMicroelectronics

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Electrical ratings
STx7NK30Z
2/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
300
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
5
5 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
3.2
3.2 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
20
20 (1)
A
PTOT
Total dissipation at TC = 25 °C
50
20
W
Derating factor
0.4
0.16
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100 pF,
R=1.5 k
Ω)
2800
V
dv/dt (3)
3.
ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
V
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
Rthj-case
Thermal resistance junction-case Max
2.50
6.25
V
Rthj-amb
Thermal resistance junction-ambient Max
62.5
V
Tl
Maximum lead temperature for soldering
purpose
300
A
Table 4.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
5A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
130
mJ



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