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NCE7580D Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE7580D
Description  NCE N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE7580D Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page
v1.0
2
NCE7580D
Pb Free Product
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to- Case (Note 2)
RθJc
0.88
/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75
V
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
2.85
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
6.5
8
mΩ
Forward Transconductance
gFS
VDS=5V,ID=30A
60
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
3050
PF
Output Capacitance
Coss
280
PF
Reverse Transfer Capacitance
Crss
VDS=50V,VGS=0V,
F=1.0MHz
130
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
15
nS
Turn-on Rise Time
tr
90
nS
Turn-Off Delay Time
td(off)
40
nS
Turn-Off Fall Time
tf
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
95
nS
Total Gate Charge
Qg
56
nC
Gate-Source Charge
Qgs
12
nC
Gate-Drain Charge
Qgd
VDS=24V,ID=40A,
VGS=10V
16
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
1.2
V
Diode Forward Current (Note 2)
IS
80
A
Reverse Recovery Time
trr
50
nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 75A
di/dt = 100A/μs(Note3)
48
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.3mH,Rg=62Ω



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