BLS3135-10 datasheet(3/12 Pages) NXP

3 / 12 page

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-10

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

RF performance at Th =25 °C in a common-base test circuit.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCES

collector-emitter voltage

RBE =0

−

VEBO

emitter-base voltage

open collector

−

ICM

peak collector current

tp ≤ 100 µs; δ≤ 10%

−

1.5

Ptot

total power dissipation

tp = 100 µs; δ = 10%; Th =25 °C

−

Tstg

storage temperature

−65

+200

°C

operating junction temperature

−

200

°C

Tsld

soldering temperature

up to 0.2 mm from ceramic cap; t

≤ 10 s −

235

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Zth j-h

thermal impedance from junction to heatsink

tp = 100 µs; δ = 10%; note 1

5.2

K/W

tp = 200 µs; δ = 10%; note 1

5.8

K/W

tp = 300 µs; δ = 10%; note 1

6.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 2.5 mA; open emitter

−

V(BR)CES

collector-emitter breakdown voltage IC = 2.5 mA; VBE =0

−

ICBO

collector leakage current

VCB =40V; IE =0

−

0.3

ICES

collector leakage current

VCE =40V; VBE =0

−

0.5

IEBO

emitter leakage current

VEB = 1.5 V; IC =0

−

0.1

hFE

DC current gain

VCE =5V; IC = 0.25 A

−

MODE OF OPERATION

(GHz)

VCE

(V)

(W)

(dB)

ηC

(%)

Class-C; tp = 100 µs; δ = 10%

3.1 to 3.5

≥10

≥7.5

typ. 9

≥35

typ. 40

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