STP60N3LH5 datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STD60N3LH5, STP60N3LH5, STU60N3LH5

4/16

Doc ID 14079 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V

VDS = 30 V,Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1.8

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 24 A

SMD version

0.0072

0.008

Ω

VGS= 10 V, ID= 24 A

0.0076 0.0084

Ω

VGS= 5 V, ID= 24 A

SMD version

0.0088

0.011

Ω

VGS= 5 V, ID= 24 A

0.0092 0.0114

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1350

265

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 48 A

VGS =5 V

(Figure 14)

8.8

4.7

2.2

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15 V, ID = 48 A

VGS =5 V

(Figure 19)

2.2

2.5

Gate input resistance

f=1 MHz gate bias

Bias= 0 test signal

level=20 mV

open drain

-1.1

Ω

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