STM32F103CBT7TR datasheet(54/96 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F103x8, STM32F103xB

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Doc ID 13587 Rev 12

5.3.8

PLL characteristics

The parameters given in Table 27 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 9.

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 26.

Low-power mode wakeup timings

Symbol

Parameter

Typ

Unit

tWUSLEEP

(1)

The wakeup times are measured from the wakeup event to the point in which the user application code

reads the first instruction.

Wakeup from Sleep mode

1.8

µs

tWUSTOP

(1)

Wakeup from Stop mode (regulator in run mode)

3.6

µs

Wakeup from Stop mode (regulator in low power

mode)

5.4

tWUSTDBY

(1)

Wakeup from Standby mode

µs

Table 27.

PLL characteristics

Symbol

Parameter

Value

Unit

Min(1)

Based on characterization, not tested in production.

Typ

Max(1)

fPLL_IN

PLL input clock(2)

Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

18.0

MHz

PLL input clock duty cycle

fPLL_OUT

PLL multiplier output clock

MHz

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

Table 28.

Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

tprog

16-bit programming time

TA–40 to +105 °C

52.5

µs

tERASE Page (1 KB) erase time

TA –40 to +105 °C

tME

Mass erase time

TA –40 to +105 °C

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