MRF9100LR3 MRF9100LSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 921 to 960 MHz, the high gain and broadband performance of these

devices make them ideal for large-signal, common source amplifier applica-

tions in 26 volt base station equipment.

• On-Die Integrated Input Match

• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts

Output Power, P1dB — 110 Watts

Power Gain @ P1dB — 16.5 dB

Efficiency @ P1dB — 53%

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,

100 Watts CW Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5. +65

Vdc

Gate-Source Voltage

- 0.5. +15

Vdc

Derate above 25°C

175

1.0

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.0

°C/W

Document Number: MRF9100

Rev. 5, 5/2006

Freescale Semiconductor

Technical Data

MRF9100LR3

MRF9100LSR3

900 MHz, 110 W, 26 V

GSM/EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI-780

MRF9100LR3

CASE 465A-06, STYLE 1

NI-780S

MRF9100LSR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.