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BLW50F Datasheet(PDF) 1 Page - Advanced Semiconductor |
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BLW50F Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 110 V BVCE0 IC = 200 mA 55 V BVEBO IE = 10 mA 4.0 V ICES VCE = 55 V 10 mA hFE VCE = 6.0 V IC = 1.4 A 19 --- 50 --- Cob VCB = 50 V f = 1.0 MHz 100 pF GP IMD3 ηηηη C VCE = 50 V POUT = 75 W(PEP) 14 --- 37 --- -30 dB dBc % NPN SILICON RF POWER TRANSISTOR BLW50F DESCRIPTION: The ASI BLW50F is Designed for use in transmitters in the HF and VHF band applications up tp 30 MHz. FEATURES: • P G = 14 dB min. at 75 W/30 MHz • IMD 3 = 50 dBc max. at 75 W(PEP) • Omnigold™ Metalization System MAXIMUM RATINGS IC 3.25 A VCBO 110 V VCEO 55 V VEBO 4.0 V PDISS 87 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθ JC 2.0 °C/W PACKAGE STYLE .500 4L FLG 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10834 |
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