A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/5

Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

48

55

---

V

Ω

30

40

---

V

25

28

---

3.5

5.0

---

V

10

---

---

mA

15

40

100

---

f = 1.0 MHz

42

50

pF

ηηηη

C

f = 860 MHz

7.5

9.0

-35

55

---

dB

dBc

%

NPN SILICON RF POWER TRANSISTOR

CBSL30

DESCRIPTION:

The

epitaxial silicon NPN transistor, using

diffused ballast resistors for high

linearity Calss-AB operation for cellular

base station application.

FEATURES:

• Internal Input Matching Network

• P

• Omnigold™ Metalization System

• η

• = Load mismatch capability 20:1

MAXIMUM RATINGS

7.5 A

48V

25 V

3.5 V

-65 °C to +200 °C

-65 °C to +150 °C

θθθθ

JC

2.0 °C/W

PACKAGE STYLE .230 6L FLG

ORDER CODE: ASI10582

MINIMUM

inches / mm

.115 / 2.92

.225 / 5.72

.075 / 1.91

.090 / 2.29

.720 / 18.29

B

C

D

E

F

G

A

MAXIMUM

.085 / 2.16

.110 / 2.79

.730 / 18.54

.235 / 5.97

inches / mm

.125 / 3.18

H

.355 / 9.02

DIM

K

L

I

J

.004 / 0.10

.120 / 3.05

.230 / 5.84

.006 / 0.15

.130 / 3.30

.260 / 6.60

K

4X .025 R

.040x45°

.115

I

.125

E

.430 D

H

G

F

J

C

A

B

2XØ.130

L

.160 / 4.06

.180 / 4.57

.980 / 24.89

.970 / 24.64

.355 / 9.02

.365 / 9.27

.365 / 9.27