DST847BPDP6 datasheet(5/8 Pages) DIODES

5 / 8 page

DST847BPDP6

Document number: DS32036 Rev. 1 - 2

5 of 8

www.diodes.com

January 2010

DST847BPDP6

Electrical Characteristics – Q2 PNP Transistor @TA = 25°C unless otherwise specified

Characteristic (Note 4)

Symbol

Min

Typical

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V(BR)CBO

-50

-100

IC = -10μA, IB = 0

Collector-Emitter Breakdown Voltage

V(BR)CES

-50

-90

IC = -10μA, IB = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-45

-65

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

-8.5

IE = -1μA, IC = 0

Collector Cutoff Current

ICBO

-15

VCB = -30V

DC Current Gain

hFE

100

200

340

330

470

IC = -10μA, VCE = -5V

IC = -2.0mA, VCE = -5V

Collector-Emitter Saturation Voltage

VCE(sat)

-70

-300

-175

-500

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

-760

-885

-1000

-1100

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage

VBE(on)

-600

-670

-715

-780

-850

IC = -2.0mA, VCE = -5V

IC = -10mA, VCE = -5V

Current Gain-Bandwidth Product

100

340

MHz

VCE = -5V, IC = -10mA,

f = 100MHz

Output Capacitance

Cobo

2.0

VCB = -10V, f = 1.0MHz

Notes:

4. Short duration pulse test used to minimize self-heating effect.

DST847BPDP6 Datasheet(PDF) 5 Page - Diodes Incorporated

DST847BPDP6 Datasheet(HTML) 5 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL