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2SC3671 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC3671 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC3671 2004-07-07 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 0 0 Common emitter Ta = 25°C 8 3 4 5 30 100 50 70 150 20 IB = 10 mA 0 200 2 1 2 4 6 Ta = 100°C Common emitter IC/IB = 40 3 0.05 0.1 0.3 0.5 1 −25 0.03 25 0.03 0.1 1 10 3 0.3 0.01 160 0 1.2 0.4 0.8 0 120 80 40 0.03 300 Common emitter VCE = 2 V 10 30 50 100 1000 0.1 1 10 −25 25 Ta = 100°C 3 0.3 0.01 500 25 Common emitter VCE = 2 V 0 8 2 4 6 0 1.2 1.6 2.0 0.8 0.4 Ta = 100°C −25 IC max (pulsed)* DC operation Ta = 25°C IC max (continuous) 10 ms* 100 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.03 0.1 0.3 1 30 0.003 0.005 0.03 0.05 0.1 0.01 0.5 3 10 100 0.3 1 5 3 10 30 |
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