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2SC4409 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SC4409 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC4409 2004-07-07 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) VCE (sat) – IC Collector current IC (mA) hFE – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe operating area 0 3 2 1 0 0.8 2.4 Common emitter Ta = 25°C 2.0 IB = 2 mA 50 30 4 5 4 0.4 1.2 100 10 6 0 1.6 15 20 Collector current IC (mA) VBE (sat) – IC 1 10 1000 300 3 Common emitter IC/IB = 20 30 100 0.2 0.5 Ta = −25°C 25 100 3000 1 3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 10 1 0.3 0.001 1 10 5 3 DC Operation (Ta = 25°C) 0.1 3 100 0.005 0.003 0.3 0.5 IC max (pulsed)* IC max (continuous) 100 ms* 10 ms* 1 ms* VCEO max 30 0.01 0.03 0.05 1 0.1 10 1000 300 3 0.03 0.05 Common emitter IC/IB = 20 0.01 30 100 0.3 0.5 Ta = 100°C 25 −25 3000 1 3 0 0.8 0.4 0.2 0 0.8 2.0 Common emitter VCE = 2 V 1.6 0.6 −25 25 Ta = 100°C 0.4 1.2 1.2 1.0 −25 25 1 30 3000 100 10 3 300 500 300 100 50 30 10 1000 Ta = 100°C Common emitter VCE = 2 V |
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