Electronic Components Datasheet Search
  British  ▼
ALLDATASHEET.CO.UK

X  

DMC2004LPK Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMC2004LPK
Description  COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC2004LPK Datasheet(HTML) 2 Page - Diodes Incorporated

  DMC2004LPK Datasheet HTML 1Page - Diodes Incorporated DMC2004LPK Datasheet HTML 2Page - Diodes Incorporated DMC2004LPK Datasheet HTML 3Page - Diodes Incorporated DMC2004LPK Datasheet HTML 4Page - Diodes Incorporated DMC2004LPK Datasheet HTML 5Page - Diodes Incorporated DMC2004LPK Datasheet HTML 6Page - Diodes Incorporated DMC2004LPK Datasheet HTML 7Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
DMC2004LPK
Electrical Characteristics N-CHANNEL – Q1 @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
IDSS
1
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
± 1
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.5
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
0.4
0.5
0.7
0.55
0.70
0.90
Ω
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
Forward Transfer Admittance
|Yfs|
200
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 4)
VSD
0.5
1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
150
pF
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
20
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q2 @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1.0
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
± 1.0
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
-0.5
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
0.7
1.1
1.7
0.9
1.4
2.0
Ω
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance
|Yfs|
200
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 4)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
175
pF
Output Capacitance
Coss
30
pF
Reverse Transfer Capacitance
Crss
20
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Q1, N-CHANNEL
0
0
V
, DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
DMC2004LPK
Document number: DS30854 Rev. 6 - 2
2 of 7
www.diodes.com
September 2007
© Diodes Incorporated



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com