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FCX718 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FCX718
Description  SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX718 Datasheet(HTML) 2 Page - Diodes Incorporated

  FCX718 Datasheet HTML 1Page - Diodes Incorporated FCX718 Datasheet HTML 2Page - Diodes Incorporated FCX718 Datasheet HTML 3Page - Diodes Incorporated  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-20
-65
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-20
-55
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.8
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-100
nA
VCB=-15V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector Emitter
Cut-Off Current
ICES
-100
nA
VCES=-15V
Collector-Emitter
Saturation Voltage
VCE(sat)
-16
-130
-145
-40
-200
-220
-300
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.98
-1.1
V
IC=-2.5A, IB=-200mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-0.85
-0.95
V
IC=-2.5A, VCE=-2V*
Static Forward Current
Transfer
Ratio
hFE
300
300
150
35
15
475
450
230
70
30
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-4A, VCE=-2V*
IC=-6A, VCE=-2V*
Transition
Frequency
fT
150
180
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
21
30
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
40
ns
VCC=-15V, IC=-0.75A
IB1=IB2=15mA
Turn-Off Time
t(off)
670
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FCX718



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