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FMMT413TA Datasheet(PDF) 3 Page - Diodes Incorporated

Part # FMMT413TA
Description  SOT23 NPN silicon planar avalanche transistor
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT413TA Datasheet(HTML) 3 Page - Diodes Incorporated

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FMMT413
Issue 3 - March 2006
3
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
150
V
Collector-emitter
breakdown voltage
BVCES
150
V
IC = 100 A
Collector-emitter
breakdown voltage
BVCEO
50
V
IC = 10mA
Emitter-base breakdown
voltage
BVEBO
6V
IE = 100 A
Collector cut-off current
ICBO
100
nA
VCB = 120V
Emitter cut-off current
IEBO
100
nA
VEB = 4V
Collector-emitter saturation
voltage
VCE(sat)
150
mV
IC = 10mA,
IB = 1mA
Base-emitter saturation
voltage
VBE(sat)
800
mV
IC = 10mA,
IB = 1mA
Current in second
breakdown (pulsed)
IUSB
22
A
VC=110V, CCE=4.7nF
(*)
NOTES:
(*) Measured with a circuit possessing an approximate loop inductance of 12nH.
25
A
VC=130V, CCE=4.7nF
(*)
Static forward current
transfer ratio
hFE
50
IC = 10mA,
VCE = 10V
Collector-emitter
inductance
Lce
2.5
nH
Standard SOT23
leads
Transition frequency
fT
150
MHz
IC = 10mA, VCE = 5V,
f = 20MHz
Output capacitance
COBO
2pF
VCB = 10V, IE = 0,
f = 1MHz



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