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LM4040 Datasheet(PDF) 2 Page - Diodes Incorporated |
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LM4040 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 10 page ![]() LM4040 LM4040 Document number: DS33195 Rev. 5 - 2 2 of 10 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Absolute Maximum Ratings (Voltages to GND Unless Otherwise Stated) Parameter Rating Unit Continuous Reverse Current 20 mA Continuous Forward Current 10 mA Operating Junction Temperature -40 to 150 °C Storage Temperature -55 to 150 °C Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum rating, for extended periods, may reduce device reliability. Unless otherwise stated voltages specified are relative to the ANODE pin. Package Thermal Data Package θJA PDIS TAMB = 25°C, TJ = 150°C SOT23 380°C/W 330mW SC70-5 380°C/W 330mW Recommended Operating Conditions Min. Max. Units Reverse Current 0.06 15 mA Operating Ambient Temperature Range -40 125 °C Electrical Characteristics (Test conditions: Tamb = 25°C, unless otherwise specified.) LM4040-2.5 Symbol Parameter Conditions Typ. LM4040 B Limits LM4040 C Limits LM4040 D Limits Units TAMB VREF Reverse breakdown voltage IR = 100µA 25°C 2.5 V Reverse breakdown voltage tolerance IR = 100µA 25°C ±5 ±12 ±25 mV -40 to 85°C ±21 ±29 ±49 -40 to 125°C ±30 ±38 ±63 IRMIN Minimum operating current 25°C 45 60 60 65 µA -40 to 85°C 65 65 70 -40 to 125°C 68 68 73 ΔVR/ΔT Average reverse breakdown voltage temperature coefficient IR = 10mA -40 to 125°C ±20 ppm/°C IR = 1mA ±15 ±100 ±100 ±150 IR = 100µA ±15 ΔVR/ΔIR Reverse breakdown change with current IRMIN IR < 1mA 25°C 0.3 0.8 0.8 1.0 mV -40 to 85°C 1.0 1.0 1.2 -40 to 125°C 1.0 1.0 1.2 1mA < IR < 15mA 25°C 2.5 6.0 6.0 8.0 -40 to 85°C 8.0 8.0 10.0 -40 to 125°C 8.0 8.0 10.0 ZR Dynamic output impedance IR = 1mA, f = 120Hz IAC = 0.1IR 0.3 0.8 0.9 1.1 Ω en Noise voltage IR = 100µA 10Hz < f < 10kHz 35 µVRMS VR Long term stability (non cumulative) t = 1000Hrs IR = 100µA 120 ppm VHYST Themal hysteresis ΔT = -40°C to =125°C 0.08 % |
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