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LC75366M Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LC75366M Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 11 page  Allowable Operating Ranges at Ta = 25°C, VSS = 0 V Electrical Characteristics at Ta = 25°C, VSS = 0 V Pin Assignment No. 4929-2/11 LC75366, 75366M Parameter Symbol Conditions min typ max Unit THD (1) VIN = 1 Vrms, f = 1 kHz, all settings flat overall, 0.006 % Total harmonic distortion VDD = 9 V THD (2) VIN = 1 Vrms, f = 20 kHz, all settings flat overall, 0.015 % VDD = 9 V Crosstalk CT VIN = 1 Vrms, f = 20 kHz, all settings flat overall, 85 dB Rg = 1 k Ω Output at maximum attenuation VO min VIN = 1 Vrms, f = 20 kHz, volume setting: –∞, –80 dB with a 470 µF capacitor between L/R Vref and VSS Total resistance RVOL (1) 10 dB steps 28.2 47 65.8 k Ω RVOL (2) 2 dB steps 12 20 28 k Ω L10dBIN, R10dBIN, LCT1, L2dBIN, R2dBIN, RCT1, Output off leakage current Ioff L10dBOUT, R10dBOUT, LCT2, L2dBOUT, R2dBOUT, –10 +10 µA RCT2, LVref, RVref Input high level current IIH VI = VDD (CL, CE and DI pins) 10 µA Input low level current IIL VI = VSS (CL, CE and DI pins) –10 µA Output noise voltage VN All settings flat overall (IHF-A), VDD = 9 V, Rg = 1 kΩ 2 10 µV Current drain IDD VDD – VSS = 11 V 1 mA CT1 180 300 420 Ω Analog switch on resistance RON For use between CT2 and Vref 90 150 210 Ω (Design target value) 0 dB, – ∞ 0.6 1.0 1.4 k Ω Other than the above 6.0 10.0 14.0 k Ω Parameter Symbol Conditions Ratings Unit Supply voltage VDD VDD 4.0 to 11.0 V Input high level voltage VIH (1) CL, DI, CE 0.3 VDD + 1 to VDD V VIH (2) S 0.8 VDD to VDD V Input low level voltage VIL (1) CL, DI, CE VSS to 0.2 VDD V VIL (2) S VSS to 0.2 VDD V Input voltage amplitude VIN L10dBIN, L2dBIN, R10dBIN, R2dBIN VSS to VDD Vp-p Input pulse width tøW CL 1 or longer µs Setup time tset up CL, DI, CE 1 or longer µs Hold time thold CL, DI, CE 1 or longer µs Operating frequency fop CL Up to 500 kHz |
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