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2N5015 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N5015
Description  NPN SILICON TRANSISTOR
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5015 Datasheet(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0067 Rev. 2 (100293)
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector to Base Cutoff Current
VCB = 400V
VCB = 500V
VCB = 580V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO1
10
10
10
10
10
10
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
@ TA = +150°C
VCB = 400V
VCB = 500V
VCB = 588V
VCB = 650V
VCB = 700V
VCB = 760V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
ICBO2
10
10
10
10
10
10
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
Emitter to Base Cutoff Current
VEB = 4V
IEBO
20
uAdc
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.2mAdc
IC = 0.2mAdc
IC = 0.2mAdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CBO
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA
V(BR)EBO
5
Vdc
Collector to Emitter Breakdown Voltage
RBE = 1KΩ
IC = 0.2mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V(BR)CER
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
VCE = 10V
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
hFE1
30
30
180
180
VCE = 10V
IC = 5mA
hFE2
10
VCE = 10V
IC = 20mA
@ TA = -55°C
hFE3
10



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