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SBL2040 Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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SBL2040 Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 7 page  R SBL2040 版本(Rev.)：201003H 2/7 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 项 目 Parameter 符 号 Symbol 数 值 Value 单 位 Unit 最大反向重复峰值电压 Repetitive peak reverse voltage VRRM 40 V 最大直流阻断电压 Maximum DC blocking voltage VDC 40 V 正向平均整流电流 Average forward current TC=100℃ (TO-220, TO-220F, TO-220HF) 整个器件 per device 单 侧 per diode IF(AV) 20 10 A 正向峰值浪涌电流 Surge non repetitive forward current （额定负载 8.3ms 半正弦波—按 JEDEC 方法） 8.3 ms single half-sine-wave (JEDEC Method) IFSM 150 A 最高结温 Maximum junction temperature Tj 150 ℃ 储存温度 Storage temperature range TSTG -40~+150 ℃ 电特性 ELECTRICAL CHARACTERISTICS 热特性 THERMAL CHARACTERISTICS 项 目 Parameter 符 号 Symbol 最小值 Value(min) 最大值 Value(max) 单 位 Unit 结到管壳的热阻 Thermal resistance from junction to case TO-220 TO-220F TO-220HF Rth(j-c) 2.0 2.4 2.4 /W ℃ 项 目 Parameter 测试条件 Tests conditions 最小值 Value(min) 典型值 Value(typ) 最大值 Value(max) 单位 Unit Tj =25℃ 200 μA IR Tj =125℃ VR=VRRM 100 mA Tj =25℃ 0.50 0.60 V VF Tj =125℃ IF=10A 0.45 0.50 V |
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