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LE28C1001M Datasheet(PDF) 6 Page - Sanyo Semicon Device

Part # LE28C1001M
Description  1MEG (131072 words x 8 bits) Flash Memory
PDF  14 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE28C1001M Datasheet(HTML) 6 Page - Sanyo Semicon Device

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Specifications
Absolute Maximum Ratings at Ta 25
°C
Note: 1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to VCC + 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
DC Recommended Operating Ranges at Ta = 0 to +70°C
DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10%
Input/output Capacitances at Ta = 25°C, VCC = 5 V ± 10%, f = 1 MHz
Power on Timing
No. 5129-6/14
LE28C1001M, T-90/12/15
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
VCC
–0.5 to +6.0
V
1
Input pin voltage
VIN
–0.5 to VCC + 0.5
V
1, 2
DQ pin voltage
VOUT
–0.5 to VCC + 0.5
V
1, 2
A9 pin voltage
VA9
–0.5 to +14.0
V
1, 3
Allowable power dissipation
Pd max
600
mW
1, 4
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Parameter
Symbol
min
typ
max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
Input low-level voltage
VIL
0.8
V
Input high-level voltage
VIH
2.0
V
Parameter
Symbol
Conditions
max
Unit
Input/output capacitance
CDQ
VDQ = 0 V
12
pF
Input capacitance
CIN
VIN = 0 V
6
pF
Parameter
Symbol
Conditions
max
Unit
Time from power on until first read operation
tPU-READ
100
µs
Time from power on until first write operation
tPU-WRITE
5
ms
Parameter
Symbol
Conditions
min
typ
max
Unit
CE = OE = VIL, WE = VIH, all DQ pins open,
Current drain during read
ICCR
address inputs = VIH or VIL, operating frequency =
30
mA
1/tRC (minimum), VCC = VCC max
Current drain during write
ICCW
CE = WE = VIL, OE = VIH, VCC = VCC max
50
mA
TTL standby current
ISB1
CE = OE = WE =VIH,VCC = VCC max
3
mA
CMOS standby current
ISB2
CE = OE = WE =VCC – 0.3 V,
20
µA
VCC = VCC max
Input leakage current
ILI
VIN = VSS to VCC, VCC = VCC max
10
µA
Output leakage current
ILO
VIN = VSS to VCC, VCC = VCC max
10
µA
Output low-level voltage
VOL
IOL = 2.1 mA, VCC = VCC min
0.4
V
Output high-level voltage
VOH
IOH = –400 µA, VCC = VCC min
2.4
V



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