2SB1151

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-022.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-7

V

DC

-5

A

Collector Current

Pulse(Note 2)

-8

A

Base Current

-1

A

SOT-223

1

W

TO-126

1.5

W

Power Dissipation (Ta=25°C)

TO-252

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.PW

≤10ms, Duty Cycle≤50%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-7

V

Collector Cut-off Current

-10

µA

Emitter Cut-off Current

-10

µA

Collector-Emitter Saturation Voltage

-0.14

-0.3

V

Base-Emitter Saturation Voltage

-0.9

-1.2

V

60

160

400

DC Current Gain

50

Turn On Time

0.15

1

µS

Storage Time

0.78

2.5

µS

Switching Time

Fall Time

0.18

1

µS

Pulse test : PW

≤350 µS, Duty Cycle≤2% Pulse

RANK

O

Y

RANGE

160 ~ 320

200 ~ 400