3N60G-X-TM3-R datasheet(3/8 Pages) UTC

3 / 8 page

3N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-110,F

ELECTRICAL CHARACTERISTICS(Cont.)

SWITCHING CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD = 300V, ID = 3.0 A, RG = 25Ω

(Note 4, 5)

Total Gate Charge

Gate-Source Charge

QGS

2.7

Gate-Drain Charge

QDD

VDS= 480V,ID= 3.0A, VGS= 10 V

(Note 4, 5)

4.9

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

3.0

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

tRR

210

Reverse Recovery Charge

QRR

VGS = 0 V, IS = 3.0 A,

dIF/dt = 100 A/μs (Note 4)

1.2

μC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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