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75N75G-TQ2-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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75N75G-TQ2-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 75N75 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-097.E ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0 V, IS = 80A 1.5 V Continuous Source Current IS 80 A Pulsed Source Current (Note 1) ISM 320 A Reverse Recovery Time tRR 132 ns Reverse Recovery Charge QRR IS = 80A, VDD = 25 V dIF / dt = 100 A/µs 660 µC Note: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% |
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