| Electronic Components Datasheet Search |
|
LTC4441 Datasheet(PDF) 9 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC4441 Datasheet(HTML) 9 Page - Linear Technology |
|
9 / 18 page ![]() LTC1154 9 1154fb Capacitive Loads Large capacitive loads, such as complex electrical systems with large bypass capacitors, should be powered using the circuit shown in Figure 3. The gate drive to the power MOSFET is passed through an RC delay network, R1 and C1, which greatly reduces the turn-on ramp rate of the switch. And since the MOSFET source voltage follows the gate voltage, the load is powered smoothly and slowly from ground. This dramatically reduces the start-up current flowing into the supply capacitor(s) which, in turn, reduces supply transients and allows for slower activation of sensi- tive electrical loads. (Diode, D1, provides a direct path for the LTC1154 protection circuitry to quickly discharge the gate in the event of an overcurrent condition). APPLICATIONS INFORMATION Lamp Loads The inrush current created by a lamp during turn-on can be 10 to 20 times greater than the rated operating current. The circuit shown in Figure 4 shifts the current limit threshold up by a factor of 11:1 (to 30A) for 100ms when the bulb is first turned on. The current limit then drops down to 2.7A after the inrush current has subsided. The RC network, RD and CD, in series with the drain sense input should be set to trip based on the expected character- istics of the load after start-up. With this circuit, it is possible to power a large capacitive load and still react quickly to an overcurrent condition. The ramp rate at the output of the switch as it lifts off ground is approximately: dV/dt = (VGATE – VTH)/(R1 • C1) And therefore the current flowing into the capacitor during start-up is approximately: ISTART-UP = CLOAD • dV/dt Using the values shown in Figure 3, the start-up current is less than 100mA and does not false-trigger the drain sense circuitry which is set at 2.7A with a 1ms delay. Figure 3. Powering Large Capacitive Loads IN EN STATUS GND VS DS G SD LTC1154 + 470μF MTP3055E 15V 12V 0.036Ω LTC1154 • F03 CD 0.01μF RD 100k R1 100k R2 100k D1 1N4148 C1 0.33μF + CLOAD 100μF OUT IN EN STATUS GND VS DS G SD LTC1154 + 470μF MTP3055EL 9.1V 12V 0.036Ω LTC1154 • F04 10k 1M 0.1μF VN2222LL 100k 12V/1A BULB Figure 4. Lamp Driver with Delayed Protection Selecting RD and CD Figure 5 is a graph of normalized overcurrent shutdown time versus normalized MOSFET current. This graph is used to select the two delay components, RD and CD, which make up a simple RC delay between the drain sense resistor and the drain sense input. Figure 5. Overcurrent Shutdown Time vs MOSFET Current MOSFET CURRENT (1 = SET CURRENT) 1 0.01 10 10 100 LTC1154 • F05 1 0.1 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |