2N3501CSM4

Prelim. 12/98

Website http://www.semelab.co.uk

HIGH VOLTAGE, MEDIUM POWER, NPN

TRANSISTOR IN A

HERMETICALLY SEALED

CERAMIC SURFACE MOUNT PACKAGE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• SILICON PLANAR EPITAXIAL NPN

TRANSISTOR

• HERMETIC CERAMIC SURFACE MOUNT

PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVELS OPTIONS

• HIGH VOLTAGE

APPLICATIONS:

Hermetically sealed surface mount version of

the popular 2N3501 for high reliability / space

applications requiring small size and low

weight devices.

Collector – Base Voltage

Collector Current

Derate above 25°C

Storage Temperature

Thermal Resistance Junction to Ambient

150V

150V

6V

300mA

500mW

2.85mW / °C

–65 to 200°C

350°C/W

MECHANICAL DATA

Dimensions in mm (inches)

LCC3 PACKAGE

Underside View

PAD 1 – Collector

PAD 2 – N/C

PAD 3 – Emitter

PAD 4 – Base

1

2

3

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.