Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

V

nA

mA

A

V

W

V

S (É)

pF

ns

A

A

V

V

°C\W

THERMAL CHARACTERISTICS

2N6782

6/00

100*

2*

4.0*

1*

4.0*

100*

200*

-100*

0.25*

1*

3.5

2.1*

0.6*

1.08*

1.0*

3.0*

60*

200*

40*

100*

10*

25*

15*

25*

25*

20*

-3.5*

-8

-0.75*

-1.5*

200

8.33*

170

f = 1MHz

(MOSFET switching times are essentially

independent of operating temperature.)

MOdified MOS POWER

symbol showing the intergal

P-N junction rectifier.

Free Air Operation

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate Body Leakage Forward

Gate Body Leakage Reverse

Zero Gate Voltage Drain Current

On State Drain Current1

Static Drain Source On-State

Voltage1

Static Drain Source On-State

Resistance1

Forward Transductance 1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current Body

Diode

Source Current1 (Body Diode)

Reverse Recovery Time

gfs

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d£ 2%

* JEDEC registered Values

DYNAMIC CHARACTERISTICS

BODY– DRAIN DIODE RATINGS & CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Junction – PC Board

,

5

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